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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER * UPS USE
CT30SM-12
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
5.0 2
2
19.5MIN.
4
20.0
3.2
4.4
1.0 q 5.45 w e 5.45
0.6
2.8
4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e
VCES ................................................................................ 600V IC ......................................................................................... 30A High Speed Switching Low VCE Saturation Voltage
q
TO-3P
APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc.
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM PC Tj Tstg --
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V
Conditions
Ratings 600 20 30 30 60 250 -40 ~ +150 -40 ~ +150 4.8
Unit V V V A A W C C g
Feb.1999
Typical value
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER * UPS USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance
(Tj = 25C)
Test conditions IC = 1mA, VGE = 0V VGE = 30V, VCE = 0V VCE = 600V, VGE = 0V IC = 3.0mA, VCE = 10V IC = 30A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz
Limits Min. 600 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- 6.0 2.5 1480 180 54 30 135 135 250 -- Max. -- 0.5 1 7.5 3.0 -- -- -- -- -- -- -- 0.50
Unit V A mA V V pF pF pF ns ns ns ns C/W
VCC = 300V, Resistance load, IC = 30A, VGE = 15V, RGE = 20 Junction to case
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10
Tj = 25C
50 COLLECTOR CURRENT IC (A)
VGE = 20V
OUTPUT CHARACTERISTICS (TYPICAL)
15V 12V Tj = 25C 11V
40
8
30
10V
6
20
9V
4
IC = 60A 30A 10A
10
8V
2
0
0
2
4
6
8
10
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER * UPS USE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 50
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V)
5
4
COLLECTOR CURRENT IC (A)
VGE = 15V Tj = 25C
VCE = 10V Tj = 25C
40
3
30
2
20
1
10
0
0
10
20
30
40
50
0
0
4
8
12
16
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE Cies, Coes, Cres (pF)
SWITCHING TIME (ns)
CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 3 2 Cies 103 7 5 3 2 102 7 5 3 Tj = 25C 2 VGE = 0V 101
f = 1MHZ Coes
SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102
tf td(off) Tj = 25C VCC = 300V VGE = 15V RG = 20
tr
td(on)
Cres
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20
VCC = 200V
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7101 100
TRANSIENT THERMAL IMPEDANCE Zth (j-c)
7 5 3 2
16
300V
10-1
7 5 3 2 7 5 3 2
12
8
10-2
7 5 3 2
10-2
7 5 3 2
4
0
0
20
40
60
80
100
10-3
10-3 10-5 2 3 5 710-4 2 3 5 710-3 PULSE WIDTH tw (s)
Feb.1999
GATE CHARGE Qg (nc)

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